The Effects of Strain on STM Lithography on HS-ssDNA/Au (111) Surface.

The Effects of Strain on STM Lithography on HS-ssDNA/Au (111) Surface.
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DOI:
10.1016/j.apsusc.2009.03.003
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发表时间:
2009-05-15
影响因子:
6.7
通讯作者:
Yang, Haeyeon
Yang, Haeyeon
中科院分区:
材料科学1区
文献类型:
--
作者:
Chen, Fan;Zhou, Anhong;Yang, Haeyeon

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利用扫描隧道显微镜(STM)光刻技术研究了12聚体HS-ssDNA自组装Au(111)表面。在较低的样品偏压和较高的隧穿电流下,重复扫描导致了纳米条纹的生长。发现相邻纳米条纹之间的条纹取向、条纹宽度和间隔宽度依赖于相邻两个金阶地重叠的位错点的相对位置。条纹和间隔物宽度也会随着距离这些点的距离而变化。结果表明,这种条纹可能反映了Au表面的应变分布和释放路径。结果还表明,HS-ssDNA分子的存在通过传递力的作用增强了金表面的光刻过程。
Scanning tunneling microscopy (STM) lithography was utilized to investigate a 12-mer HS-ssDNA self-assembled Au (111) surface. Under low sample bias and high tunneling current, the repeated scanning resulted in the growth of nanostripes. The stripe orientation, the stripe width, and the spacer width between adjacent nanostripes were found to be dependent on their relative locations from dislocation points where two adjacent gold terraces overlap. The stripe and the spacer width also vary with the distance from these points. The results indicate that such stripes may reflect the strain distributions and the release pathway along the Au surfaces. The results also suggest that the presence of HS-ssDNA molecules enhances the lithography processes on the gold surface by acting as force transmitters.
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发表时间: 1999-08-01
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