A Global Shutter High Speed TDI CMOS Image Sensor With Pipelined Charge Transfer Pixel
A Global Shutter High Speed TDI CMOS Image Sensor With Pipelined Charge Transfer Pixel
复制标题
具有流水线电荷传输像素的全局快门高速 TDI CMOS 图像传感器
DOI：
10.1109/jsen.2018.2800743
复制
发表时间：
2018-04-01
影响因子：
4.3
通讯作者：
Gao, Zhiyuan
中科院分区：
文献类型：
--
作者：
Xu, Jiangtao;Shi, Xiaolin;Gao, Zhiyuan
提出了一种120 × 45全局快门高速时间延迟积分CMOS图像传感器。该像素实现了无偏移和低噪声的流水线信号积累，并提出了一种新的布局，以增加所提出的像素的等效光敏区域的填充因子。由于所提出的PCT像素的并行性，全局快门曝光方法应用于该传感器，可以消除非同步信号捕获的问题。建议的TDI传感器是在一个0.11 μ m的一聚三金属CMOS图像传感器技术，100 KHz的线速率，PCT像素大小为30 × 15 μ m（2），和填充因子为43.5%。测量结果表明，该传感器的最大灵敏度为95 V/luxxsec，能量消耗为0.12 nJ/pixel。实测信噪比提升值与理论值吻合较好。该传感器具有实现高扫描速度和高TDI级的潜力，同时成本更低的功耗和硅面积。
In this paper, a 120 x 45 global shutter high speed time delay integration (TDI) CMOS image sensor with pipelined charge transfer pixel (PCT-pixel) is presented. Offset free and low noise pipelined signal accumulation are achieved by the PCT-pixel, and a novel layout is also proposed to increase the equivalent photosensitive area's fill factor of the proposed pixel. Due to the parallelism of the proposed PCT-pixel, global shutter exposure method is applied in this sensor, which can eliminate nonsynchronous signal capturing problem. The proposed TDI sensor is implemented in a 0.11-mu m one-poly three-metal CMOS image sensor technology with a line rate of 100 KHz, a PCT-pixel size of 30 x 15 mu m(2), and a fill factor of 43.5%. Measurement results show that the sensor can achieve a maximum sensitivity of 95 V/luxxsec and an energy consumption of 0.12 nJ/pixel. Measured signal-to-noise ratio boost value follows theoretical value well. The proposed sensor has the potential to achieve high scanning speed and high TDI stage while costing less power and silicon area.