Modeling of Carrier Transport Dynamics at GHz-Frequencies for RF Circuit-Simulation
Modeling of Carrier Transport Dynamics at GHz-Frequencies for RF Circuit-Simulation
复制标题
用于 RF 电路仿真的 GHz 频率下的载波传输动态建模
DOI：
10.1007/978-3-7091-0624-2_60
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发表时间：
2004
期刊：
影响因子：
--
通讯作者：
S. Miyamoto
中科院分区：
文献类型：
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作者：
D. Navarro;N. Nakayama;K. Machida;Y. Takeda;S. Chiba;H. Ueno;H. Mattausch;M. Miura;T. Ohguro;T. Iizuka;M. Taguchi;S. Miyamoto
MOSFET沟道中的快速时变栅极输入下的载流子动态特性被包括在电路仿真的建模中，并在SPICE 3f5中实现，仅增加7%的计算运行时成本。正确再现瞬态漏电流以及谐波失真特性进行了验证。虽然低频操作下的载流子动态主要由沟道中的载流子迁移率决定，但高频操作下的主导因素变为沟道充电和放电。
Carrier dynamics in a MOSFET channel under fast time-varying gate input is included in the modeling for circuit simulation and implemented in SPICE3f5 at only 7% increased computational runtime cost. Correct reproduction of transient drain currents as well as harmonic-distortion characteristics are verified. While the carrier dynamics under low-frequency operation is mostly governed by the carrier mobility in the channel, the dominant factor under high-frequency operation changes to channel charging and discharging.