n-Type Doping of Vapor-Liquid-Solid Grown GaAs Nanowires.
n-Type Doping of Vapor-Liquid-Solid Grown GaAs Nanowires.
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DOI：
10.1007/s11671-010-9815-7
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发表时间：
2011-12
影响因子：
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通讯作者：
Tegude, Franz-Josef
中科院分区：
文献类型：
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作者：
Gutsche, Christoph;Lysov, Andrey;Regolin, Ingo;Blekker, Kai;Prost, Werner;Tegude, Franz-Josef
在这封信中，报道了在 (111)B GaAs 衬底上通过金属有机气相外延以气-液-固生长模式生长的 GaAs 纳米线的 n 型掺杂。调整 400°C 的低生长温度以排除壳生长。研究了掺杂前驱体对砷化镓纳米线形貌的影响。四乙基锡作为掺杂前驱体，能够在相对较小的工艺窗口内实现重度n型掺杂的GaAs纳米线，而二叔丁基硅烷则没有发现掺杂效应。对单根纳米线进行的电学测量揭示了轴向不均匀的掺杂分布。在同一运行的许多线中，发现 GaAs 纳米线的施主浓度 ND 从 7 × 1017 cm-3 到 2 × 1018 cm-3 不等。 n 型导电性已通过制造的纳米线金属-绝缘体-半导体场效应晶体管器件的传输特性得到证明。
In this letter, n-type doping of GaAs nanowires grown by metal–organic vapor phase epitaxy in the vapor–liquid–solid growth mode on (111)B GaAs substrates is reported. A low growth temperature of 400°C is adjusted in order to exclude shell growth. The impact of doping precursors on the morphology of GaAs nanowires was investigated. Tetraethyl tin as doping precursor enables heavily n-type doped GaAs nanowires in a relatively small process window while no doping effect could be found for ditertiarybutylsilane. Electrical measurements carried out on single nanowires reveal an axially non-uniform doping profile. Within a number of wires from the same run, the donor concentrations ND of GaAs nanowires are found to vary from 7 × 1017 cm-3 to 2 × 1018 cm-3. The n-type conductivity is proven by the transfer characteristics of fabricated nanowire metal–insulator-semiconductor field-effect transistor devices.