Design considerations of IGBT's in resonant converter applications
Design considerations of IGBT's in resonant converter applications
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谐振转换器应用中 IGBT 的设计注意事项
DOI：
10.1109/4.485871
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发表时间：
1996
期刊：
影响因子：
--
通讯作者：
K. Shenai
中科院分区：
文献类型：
--
作者：
Hsin;N. Kutkut;D. Divan;K. Shenai
采用先进的混合器件和电路仿真器对绝缘栅双极晶体管（IGBT）在零电压开关（ZVS）谐振变换器中的开关动态特性进行了研究和优化。结果表明，双极型和MOS器件的参数必须仔细优化，以获得最低的总功率损耗。在高级行为电路仿真器中使用了一个简单的电路仿真模型，其中模型参数是从混合的器件和电路仿真中提取的。一个典型的串联谐振变换器（SRC）的性能分析表明，ZVS条件是更有利的比零电流开关（ZCS）条件，从获得有效的功率转换的观点。结果表明，IGBT的窄源导致较低的总开关功率损耗。
The switching dynamics of insulated gate bipolar transistors (IGBT's) in zero voltage switching (ZVS) resonant converter applications is studied and optimized using an advanced mixed device and circuit simulator. It is shown that bipolar and MOS device parameters must be carefully optimized to obtain the lowest total power loss. A simple circuit simulation model was used in an advanced behavioral circuit simulator where the model parameters were extracted from mixed device and circuit simulations. Performance analysis of a typical series resonant converter (SRC) shows that ZVS condition is more favorable than the zero current switching (ZCS) condition from the standpoint of obtaining efficient power conversion. It is shown that IGBT's with narrower source result in lower total switching power loss.