High Temperature Nitridation of 4H-SiC MOSFETs
High Temperature Nitridation of 4H-SiC MOSFETs
复制标题
4H-SiC MOSFET 的高温氮化
DOI：
10.4028/www.scientific.net/msf.858.623
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发表时间：
2016
期刊：
影响因子：
--
通讯作者：
P. Mawby
中科院分区：
文献类型：
--
作者：
H. Rong;Y. Sharma;T. Dai;Fan Li;M. Jennings;S. Russell;D. Martin;P. Mawby
本文介绍和分析了4 H-SiC（0001）横向MOSFET和MOS电容的实验结果，栅氧化层直接在N_2O环境中生长，或在O_2环境中生长，然后进行N_2O后氧化退火处理。研究了1200°C、1300°C、1400°C和1500°C的不同氮化温度。结果表明，在高温（>1200°C）下，4 H-SiC MOSFET的界面陷阱密度（~1.5× 10 ~（11）cm ~（-2）eV ~（-1））和场效应沟道迁移率（19 cm ~ 2/V·s）较低温（1× 10 ~（12）cm ~（-2）eV ~（-1）和4 cm ~ 2/V·s）有明显的提高。在这些氮化温度中，已经发现1300°C在增加场效应沟道迁移率和降低阈值电压方面是最有效的。
This paper presents and analyse the experimental results of 4H-SiC(0001) lateral MOSFETs and MOS capacitors with gate oxides grown directly in N2O environment or in O2 ambient followed by a N2O post oxidation annealing process. Different nitridation temperatures of 1200°C, 1300°C, 1400°C and 1500°C have been investigated. Results have demonstrated that at high temperature (>1200°C) there is a significant improvement in the interface trap density (~1.5×1011 cm-2eV-1 at 0.2 eV) and field effect channel mobility (19 cm2/V.s) of 4H-SiC MOSFET compare with those at lower temperature (1×1012 cm-2eV-1 at 0.2 eV and 4 cm2/V.s). Among those nitridation temperatures, 1300°C has found to be the most effective in increasing the field effect channel mobility and reducing threshold voltage.