A new secondary ion mass spectrometry technique for III‐V semiconductor compounds using the molecular ions CsM+
A new secondary ion mass spectrometry technique for III‐V semiconductor compounds using the molecular ions CsM+
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使用分子离子 CsM+ 测量 III-V 族半导体化合物的新型二次离子质谱技术
DOI：
10.1063/1.341381
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发表时间：
1988
影响因子：
3.2
通讯作者：
Y. Gao
中科院分区：
文献类型：
--
作者：
Y. Gao
本文介绍了一种新的二次离子质谱技术，用于分析基体元素的成分。它是在Cs+离子轰击下检测分子离子CsM+而不是M±离子（M是待分析的基质元素）。CsM+离子产率的线性特性使分析不受基质效应的影响。本文给出了在AlGaAs/GaAs多层结构的深入定量成分分析中的应用。测定组分的绝对精度优于2%，深度分辨率小于100 A。
We describe a new secondary ion mass spectrometry technique for compositional analysis of matrix elements. It consists of detecting the molecular ions CsM+ rather than M± ions (M is the matrix element to be analyzed) under Cs+ primary ion bombardment. The linear behavior of the CsM+ ion yield makes the analysis independent of the matrix effect. An application to in‐depth quantitative compositional analysis for AlGaAs/GaAs multilayer structures is given. The compositions were determined with an absolute accuracy better than 2% and the depth resolution was smaller than 100 A.