Studies of resolidification of non-thermally molten InSb using time-resolved X-ray diffraction

Studies of resolidification of non-thermally molten InSb using time-resolved X-ray diffraction
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利用时间分辨 X 射线衍射研究非热熔融 InSb 的再凝固

DOI:
10.1007/s00339-005-3299-9
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发表时间:
2005
期刊:
Applied Physics A
影响因子:
--
通讯作者:
J. Larsson
J. Larsson
中科院分区:
--
文献类型:
--
作者:
M. Harbst;T. Hansen;C. Caleman;W. Fullagar;P. Jönsson;P. Sondhauss;O. Synnergren;J. Larsson

文献摘要

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我们用时间分辨X射线衍射监测熔融InSb的再凝固过程。熔化是由超短激光脉冲和高重复率的多次发射实验中进行的测量。该方法给出了关于瞬时再生长和永久损伤层的性质的直接信息。它不依赖于基于表面反射率或二次谐波产生(SHG)的模型。测得的再凝固过程已与1-D热力学热传导模型建模。重要的参数,如样品温度,熔化深度和非晶表面层厚度直接从数据中,而样品的镶嵌性和自由载流子密度可以通过与模型进行比较来量化。熔体深度高达80纳米已被观察到,并在2-8米/秒的范围内的再生长速度已被测量。
We have used time-resolved X-ray diffraction to monitor the resolidification process of molten InSb. Melting was induced by an ultra-short laser pulse and the measurement conducted in a high-repetition-rate multishot experiment. The method gives direct information about the nature of the transient regrowth and permanently damaged layers. It does not rely on models based on surface reflectivity or second harmonic generation (SHG). The measured resolidification process has been modeled with a 1-D thermodynamic heat-conduction model. Important parameters like sample temperature, melting depth and amorphous surface layer thickness come directly out of the data, while mosaicity of the sample and free carrier density can be quantified by comparing with models. Melt depths up to 80 nm have been observed and regrowth velocities in the range 2–8 m/s have been measured.