Analytical Single-Electron Transistor(SET)Model for Design and Analysis of Realistic SET Circuits
Analytical Single-Electron Transistor(SET)Model for Design and Analysis of Realistic SET Circuits
复制标题
用于设计和分析实际 SET 电路的分析单电子晶体管 (SET) 模型
DOI：
10.1143/jjap.39.2321
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发表时间：
2000
影响因子：
1.5
通讯作者：
A. Toriumi
中科院分区：
文献类型：
--
作者：
K. Uchida;K. Matsuzawa;J. Koga;R. Ohba;S. Takagi;A. Toriumi
在这项工作中，我们提出了一个紧凑的、基于物理的、解析的单电子晶体管(SET)模型，适用于实际SET电路的设计和分析。该模型是基于关联单电子隧穿的“正统”理论和稳态主方程方法导出的。利用SPICE仿真程序中实现的模型，成功地计算了设定的逆变器特性。还成功地模拟了金属氧化物半导体场效应晶体管(MOSFET)的混合电路。利用该模型，阐明了在完全对称的SET的情况下，SET电流与栅极电压的关系随漏极电压的变化达到漏极电压的一半。
In this work, we propose a compact, physically based, analytical single-electron transistor (SET) model suitable for the design and analysis of realistic SET circuits. The model is derived on the basis of the "orthodox" theory of correlated single-electron tunneling and the steady-state master equation method. The SET inverter characteristics are successfully calculated using the model implemented in the simulation program with integrated circuit emphasis (SPICE). The hybrid circuit of SETs with metal-oxide-semiconductor field-effect transistors (MOSFETs) is also successfully simulated. By utilizing the model, it is clarified that the drain-voltage-induced shift of the gate voltage dependence of SET current reaches one-half of the drain voltage in the case of a completely symmetric SET.