Resistive switching behavior of solution-processed AlOx and GO based RRAM at low temperature
Resistive switching behavior of solution-processed AlOx and GO based RRAM at low temperature
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DOI：
10.1016/j.sse.2019.107735
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发表时间：
2020-06-01
影响因子：
1.7
通讯作者：
Zhao, Ce Zhou
中科院分区：
文献类型：
--
作者：
Qi, Y. F.;Shen, Z. J.;Zhao, Ce Zhou
本文报道了在用氧化铝（AlOx）和氧化石墨烯（GO）介电膜制造的电阻式随机存取存储器（RRAM）器件中观察到的电阻开关行为，所述介电膜分别在250摄氏度和50摄氏度的低退火温度下对AlOx和GO介电膜进行溶液处理。以金属氧化物和二维材料为代表，对AlOx和GO基RRAM的阻变性能进行了详细的研究和全面的比较，包括工作电压、电阻分布、电阻比、导电机理和保持/耐久性能。AlOx基RRAM器件具有更小的工作电压和更好的稳定性，而GO基RRAM器件具有更高的高阻态电阻值和电阻比。目前的研究开辟了环境友好的溶液处理的AlOx和GO薄膜的非易失性存储器（NVM）的低能耗的有前途的应用。
This paper reports on resistive switching behavior observed in resistive random access memory (RRAM) devices fabricated with aluminum oxide (AlOx) and graphene oxide (GO) dielectric films, which were solution-processed under low annealing temperatures of 250 degrees C and 50 degrees C for AlOx and GO dielectric films, respectively. As representative of metal oxide and two-dimensional material, a detailed study and comprehensive comparison in view of resistive switching performance has been conducted for AlOx and GO based RRAM, including operation voltage, resistance distribution, resistance ratio, conduction mechanism and retention/endurance property. A smaller operation voltage and better stability were demonstrated in AlOx based RRAM devices while higher resistance magnitude of high resistance state (HRS) and resistance ratio were observed in GO based RRAM devices. The current study opens up promising applications of environmental-friendly solution-processed AlOx and GO films with lower energy consumption for non-volatile memory (NVM).