Organic-crystal light-emitting field-effect transistors driven by square-wave gate voltages.
Organic-crystal light-emitting field-effect transistors driven by square-wave gate voltages.
复制标题
DOI：
10.1166/jnn.2010.1798
复制
发表时间：
2010-02
影响因子：
--
通讯作者：
T. Yamao;K. Terasaki;Y. Shimizu;S. Hotta
中科院分区：
文献类型：
--
作者：
T. Yamao;K. Terasaki;Y. Shimizu;S. Hotta
我们改进了有机发光场效应晶体管的操作方法，通过在栅电极上施加方波。噻吩/亚苯基共聚低聚物晶体用作有机层。与正弦波栅偏压相比，方波栅偏压产生的发光强度是正弦波栅偏压的10倍。当栅极偏压穿过0 V以便为正时，通过从源极接触的电子注入发生有效发射。当非对称电极用于源极和漏极接触时，所得到的发射在491.5nm处表现出窄谱线，其半高宽约为1.1nm。线变窄预期是由来自Ag源极接触的增强的电子注入引起的发射强度增量的结果。发射线的位置与腔谐振引起的激光振荡的多模位置密切相关。
We have improved the operation method of organic light-emitting field-effect transistors by applying a square wave to the gate electrode. A thiophene/phenylene co-oligomer crystal was used as the organic layer. Compared with the sinusoidal wave gate bias application, the square-wave bias produces the emission intensity ten times as large as that of the former. The effective emissions take place through electrons injection from the source contact when the gate bias traverses 0 V so as to be positive. When asymmetric electrodes were used for the source and drain contacts, the resulting emission exhibited the narrowed spectral line at 491.5 nm with its FWHM approximately 1.1 nm. The line narrowing is expected to be a consequence of the emission intensity increment caused by the enhanced electrons injection from the Ag source contact. The location of the emission line is closely related to those of the multimodes due to the laser oscillation by cavity resonance.