Stabilization of correlated ferroelectric and ferromagnetic domain structures in BiFe0.9Co0.1O3 films
Stabilization of correlated ferroelectric and ferromagnetic domain structures in BiFe0.9Co0.1O3 films
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DOI：
10.1063/5.0061508
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发表时间：
2021-09-27
影响因子：
4
通讯作者：
Azuma, Masaki
中科院分区：
文献类型：
--
作者：
Katsumata, Marin;Shigematsu, Kei;Azuma, Masaki
Co取代的铋铁氧体BiFe0.9Co0.1O3薄膜是一种很有前途的低功耗非挥发性磁存储器件的候选材料，因为在室温下可以直接观察到电场的磁化反转。然而，这种现象发生在有限的区域中，其中铁电域由形成条纹图案的两个极化变体组成。我们利用一种称为拖尾场的有效面内电场，演示了条形电畴结构扩展到整个电极化区。还证明了铁电和铁磁之间的一一对应关系。
Co-substituted bismuth ferrite, BiFe0.9Co0.1O3, thin film is a promising candidate material for low-power-consumption nonvolatile magnetic memory devices because magnetization reversal by an electric field has been directly observed at room temperature. However, this phenomenon takes place in a limited region where the ferroelectric domain is composed of two polarization variants forming stripe patterns. We demonstrate the extension of the stripe domain structure to the entire electrically poled region by utilizing an effective in-plane electric field called a trailing field. A one-to-one correlation between ferroelectric and ferromagnetic domains was also demonstrated.