The electrophysical properties of silicon nitride at low temperatures
The electrophysical properties of silicon nitride at low temperatures
复制标题
氮化硅的低温电物理性质
DOI：
10.1063/1.338959
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发表时间：
1987
影响因子：
3.2
通讯作者：
I. Ciric
中科院分区：
文献类型：
--
作者：
N. A. Asadullayev;N. Brandt;S. Chudinov;S. Kozlov;I. Ciric
研究了金属-氮化硅-二氧化硅-半导体结构在2-450 K的宽温度范围内，在高达8 MV/cm的高电场和高达70 kG的磁场下的导电性。在低于30k的温度下发现了很强的正磁阻。在30<T< 250k的温度下，观察到微弱的负磁阻。正磁电阻的存在及其对磁场方向的依赖性较弱，表明氮化硅薄膜在温度低于30 K时具有跳变导电性。讨论了高电场下不同的跳变电导率机制。研究了温度为4.2 K的降解过程对结构电导率的影响。在降解过程中，结构的电导率发生了质的变化。
The conductivity of the metal‐silicon nitride‐silicon dioxide‐semiconductor structure has been studied over a wide range of temperatures, 2–450 K, in a high electric field up to 8 MV/cm and magnetic field up to 70 kG. A strong positive magnetoresistance has been found at temperatures below 30 K. At temperatures of 30<T<250 K a weak negative magnetoresistance is observed. The existence of a positive magnetoresistance and its weak dependence on the magnetic field direction concerning that of current through a structure shows a hopping conductivity mechanism for silicon nitride film at temperatures below 30 K. Different hopping conductivity mechanisms in a high electric field have been discussed. The influence of a degradation process at T=4.2 K on the structure’s conductivity has been investigated. Qualitative changes in the structure’s conductivity during a degradation process have been found.