High Quality P-Type A-SiC Film Doped with B(Ch 3 ) 3 and its Application to A-Si Solar Cells
High Quality P-Type A-SiC Film Doped with B(Ch 3 ) 3 and its Application to A-Si Solar Cells
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掺杂B(Ch 3 ) 3 的高质量P型A-SiC薄膜及其在非晶硅太阳能电池中的应用
DOI：
10.1557/proc-118-557
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发表时间：
1988
期刊：
影响因子：
--
通讯作者：
S. Tsuda
中科院分区：
文献类型：
--
作者：
Y. Kuwano;S. Tsuda
用一种新的掺杂气体B(CH3)3代替B2H6制备了高质量的p型a-SiC薄膜。用B(CH3)1沉积的a-SiC薄膜具有较高的光致发光强度和较低的缺陷密度。B(CH3)3的加入也提高了掺杂效率。对于p层掺杂B(CH3)3的100cm2 a-Si太阳电池，组件效率达到9%以上。为了实现对衬底低损伤的高电子密度等离子体，发展了一种新的等离子体CVD方法--控制等离子体磁控管(CPM)方法。以B(CH3)3为原料，采用CPM法制备了高电导p型μc(微晶)-SiC膜。结果表明，CPM法不仅适用于μc薄膜的制备，而且适合于高速沉积。
High-quality p-type a-SiC films were prepared using a new doping gas, B(CH 3 ) 3 , instead of B 2 H 6 . a-SiC films deposited with B(CH 3 ) 1 show high photoluminescence intensity and low defect density. Doping efficiency was also improved by usiyg B(CH 3 ) 3 . A module efficiency of more than 9% was achieved for a 100 cm 2 a-Si solar cell whose p-layer was doped with B(CH 3 ) 3 . A new plasma CVD method, called controlled plasma magnetron (CPM) method was developed to realize high electron-density plasma with low damage to substrate. High conductive p-type μc(microcrystalline)- SiC films were prepared by CPM method with B(CH 3 ) 3 . CPM method was found to be suitable not only for preparation of μc films but for high-speed deposition.