Soft X-ray detection and photon counting spectroscopy with commercial 4H-SiC Schottky photodiodes

Soft X-ray detection and photon counting spectroscopy with commercial 4H-SiC Schottky photodiodes
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使用商用 4H-SiC 肖特基光电二极管进行软 X 射线检测和光子计数光谱

DOI:
10.1016/j.nima.2016.05.053
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发表时间:
2016
影响因子:
1.4
通讯作者:
A. M. Barnett
A. M. Barnett
中科院分区:
物理与天体物理3区
文献类型:
--
作者:
S. Zhao;T. Gohil;G. Lioliou;A. M. Barnett

文献摘要

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本文报道了两种不同有效面积(0.06mm ~ 2和0.5mm ~ 2)的商用4 H-SiC肖特基光电二极管的室温电学特性和X射线探测测量结果。即使在高电场强度(0.06 mm 2二极管为403 kV/cm; 0.5 mm 2二极管为227 kV/cm)下,器件也表现出低暗电流(小于10 pA)。X射线测量的结果表明,二极管可以用作光子计数光谱X射线探测器与适度的能量分辨率:在5.9 keV的1.8 keV和3.3 keV的半高宽,为0.06 mm 2和0.5 mm 2的设备,分别。噪声分析的光电二极管耦合到一个定制的低噪声电荷敏感三极管。
The results of electrical characterisation and X-ray detection measurements of two different active area (0.06 mm2and 0.5 mm2) commercial 4H-SiC Schottky photodiodes at room temperature are reported. The devices exhibited low dark currents (less than 10 pA) even at a high electric field strengths (403 kV/cm for 0.06 mm2diodes; 227 kV/cm for 0.5 mm2diodes). The results of the X-ray measurements indicate that the diodes can be used as photon counting spectroscopic X-ray detectors with modest energy resolutions: FWHM at 5.9 keV of 1.8 keV and 3.3 keV, for the 0.06 mm2and 0.5 mm2devices, respectively. Noise analysis of the photodiodes coupled to a custom low noise charge sensitive preamplifier is also presented.