Growth Mechanism of Pentacene on HfON Gate Insulator and Its Effect on Electrical Properties of Organic Field-Effect Transistors
Growth Mechanism of Pentacene on HfON Gate Insulator and Its Effect on Electrical Properties of Organic Field-Effect Transistors
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DOI：
10.1587/transele.e95.c.885
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发表时间：
2012-05
期刊：
影响因子：
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通讯作者：
M. Liao;H. Ishiwara;S. Ohmi
中科院分区：
文献类型：
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作者：
M. Liao;H. Ishiwara;S. Ohmi
制备了含SiO2和HfON栅极绝缘子的五苯基有机场效应晶体管（ofet），并研究了栅极绝缘子对五苯基ofet电学性能的影响以及五苯薄膜的微观结构。结果表明，HfON栅极绝缘子上沉积的并五苯薄膜的晶粒尺寸大于SiO2栅极绝缘子上沉积的并五苯薄膜。由于HfON栅极绝缘子的五茂烯基OFET的晶粒尺寸较大，其电性能优于SiO2栅极绝缘子的五茂烯基OFET。同时，还研究了低温（如140℃）制备的HfON栅极绝缘子的五苯基OFET。在140◦C下制备的OFET显示出小的亚阈值摆幅为0.14 V/decade，大的开/关电流比为4 × 104，阈值电压为- 0.65 V，工作电压为- 2 V时的空穴迁移率为0.33 cm2/Vs
Pentacene-based organic field-effect transistors (OFETs) with SiO2 and HfON gate insulators have been fabricated, and the effect of gate insulator on the electrical properties of pentacene-based OFETs and the microstructures of pentacene films were investigated. It was found that the grain size for pentacene film deposited on HfON gate insulator is larger than that for pentacene film deposited on SiO2 gate insulator. Due to the larger grain size, pentacene-based OFET with HfON gate insulator shows better electrical properties compared to pentacene-based OFET with SiO2 gate insulator. Meanwhile, low-temperature (such as 140◦C) fabricated pentacene-based OFET with HfON gate insulator was also investigated. The OFET fabricated at 140◦C shows a small subthreshold swing of 0.14 V/decade, a large on/off current ratio of 4 × 104, a threshold voltage of −0.65 V, and a hole mobility of 0.33 cm2/Vs at an operating voltage of −2 V. key words: pentacene, OFETs, high-k, grain size, HfON