InAs/GaInSb superlattices as a promising material system for third generation infrared detectors
InAs/GaInSb superlattices as a promising material system for third generation infrared detectors
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DOI：
10.1117/12.628637
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发表时间：
2005-06
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影响因子：
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通讯作者：
A. Rogalski
中科院分区：
文献类型：
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作者：
A. Rogalski
到目前为止，已有两个系列的多元素探测器用于红外应用扫描系统(第一代)和凝视系统(第二代)。目前，第三代系统正在开发之中。在通常的理解中，第三代JR系统提供了增强的功能，如更大的像素数、更高的帧速率、更好的热分辨率以及多色功能和其他片上功能。在第三代红外光子探测器类中，考虑了两个主要的竞争对手：HgCdTe光电二极管和AlGaAs/GaAs量子阱红外光电导体(QWIP)。然而，在长波红外(LWIR)区域，由于外延层的冶金问题，如均匀性和缺陷元素的数量，HgCdTe材料无法满足大尺寸二维阵列的要求。在GaSb衬底上生长的InAs/GaInSb超晶格系统具有良好的空间均匀性和3-25tm的截止波长。最近发表的研究结果表明，可以制备高性能的中波长红外InAs/GaInSb超自由基焦平面阵列。基于这些非常有希望的结果，现在很明显，锑化物超晶格技术正在与HgCdTe双色技术竞争，具有标准III-V技术的潜在优势，在成本上更具竞争力，因此系列产品定价更具竞争力。
Hitherto two families of multielement detectors have been used for infrared applications scanning systems (first generation) and staring systems (second generation). Third generation systems are being developed nowadays. In the common understanding third generation JR systems provide enhanced capabilities like larger number of pixels higher frame rates better thermal resolution as well as multicolour functionality and other on-chip functions. In the class of third generation infrared photon detectors two main competitors HgCdTe photodiodes and AlGaAs/GaAs quantum well infrared photoconductors (QWIPs) are considered. However in the long wavelength infrared (LWIR) region the HgCdTe material fail to give the requirements of large format two-dimensional (2D) arrays due to metallurgical problems of the epitaxial layers such as uniformity and number of defected elements. A superlattice based InAs/GaInSb system grown on GaSb substrate seems to be an attractive to HgCdTe with good spatial uniformity and an ability to span cutoff wavelength from 3 to 25 tm. The recently published results have indicated that high performance middle wavelength infrared (MWIR) InAs/GaInSb superlatice focal plane arrays can be fabricated. Based on these very promising results it is obvious now that the antimonide superlattice technology is competing with HgCdTe dual colour technology with the potential advantage of standard III-V technology to be more competitive in costs and as a consequence series production pricing.