Synthesis of In2O3 nanowire-decorated Ga2O3 nanobelt heterostructures and their electrical and field-emission properties.
Synthesis of In2O3 nanowire-decorated Ga2O3 nanobelt heterostructures and their electrical and field-emission properties.
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DOI：
10.1021/nn100254f
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发表时间：
2010-04
期刊：
影响因子：
17.1
通讯作者：
Jing Lin;Yang Huang;Y. Bando;Chengchun Tang;Chun Li;D. Golberg
中科院分区：
文献类型：
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作者：
Jing Lin;Yang Huang;Y. Bando;Chengchun Tang;Chun Li;D. Golberg
报道了用一种简单的无催化剂方法制备了In_2O_3纳米线修饰的Ga_2O_3纳米带异质结构。在典型的异质结构中，In_2O_3纳米线在Ga_2O_3纳米带上形成一种“背鳍”，呈现T形截面。系统地研究了该材料的结构、电学性质和场发射性能。异质结具有典型的电导增强的n型半导体行为。场发射测量表明，它们具有较低的开启电场(约1.31V/微米)和较高的场增强因子(4000以上)。其优异的场发射特性归功于其特殊的几何结构和良好的电学性能。目前的In_2O_3修饰的Ga_2O_3异质结有望成为用于先进的电子和光电纳米器件的像样的场发射材料。
We report on the synthesis of In2O3 nanowire-decorated Ga2O3 nanobelt heterostructures via a simple catalyst-free method. A typical heterostructure, where an In2O3 nanowire forms a sort of a "dorsal fin" on the Ga2O3 nanobelt, exhibits the T-shaped cross-section. The structure, electrical porperties, and field-emission properties of this material are systematically investigated. The heterostructures possess a typical n-type semiconducting behavior with enhanced conductivity. Field-emission measurements show that they have a low turn-on field (approximately 1.31 V/microm) and a high field-enhancement factor (over 4000). The excellent field-emission characteristics are attributed to their special geometry and good electrical properties. The present In2O3-decorated Ga2O3 heterostructures are envisaged to be decent field-emitters useful in advanced electronic and optoelectronic nanodevices.