Structural, electrical, and magnetic properties of chemical solution deposited BiFe1−xTixO3 and BiFe0.9Ti0.05Co0.05O3 thin films
Structural, electrical, and magnetic properties of chemical solution deposited BiFe1−xTixO3 and BiFe0.9Ti0.05Co0.05O3 thin films
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DOI：
10.1063/1.3158556
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发表时间：
2009-07
影响因子：
3.2
通讯作者：
N. M. Murari;Reji Thomas;R. Melgarejo;S. Pavunny;R. Katiyar
中科院分区：
文献类型：
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作者：
N. M. Murari;Reji Thomas;R. Melgarejo;S. Pavunny;R. Katiyar
采用化学溶液沉积法在Pt/TiO 2/SiO2/Si衬底上制备了BiFeO 3（BFO）、BiFe 1 − xTixO 3和BiFe0.9Ti0.05Co0.05O3薄膜。BFO薄膜具有畸变的菱面体R3 c结构，在BiFe 1 − xTixO 3（104）/（110）反射中变宽，表明Ti取代后晶粒生长受限。Ti取代BFO后，表面粗糙度（rms）降低。晶格中高达5%的Ti显著降低了漏电流。对于BiFe 1 − xTixO 3，漏电流定性地遵循相同的趋势，其行为类似于空间电荷限制的电流传导。的磁性完全失去了Ti取代和稍微恢复cosubstitution与磁性活跃的Co。消失的铁磁磁滞的BFO与Ti取代和它的再现与Co是暗示的起源的磁性的BFO晶格本身的后果，因此支持它作为一个内在的属性的BFO。BFO的电容电压特性，...
BiFeO3 (BFO), BiFe1−xTixO3, and BiFe0.9Ti0.05Co0.05O3 thin films were deposited on Pt/TiO2/SiO2/Si substrates by chemical solution deposition. BFO film has distorted rhombohedral R3c structure and in BiFe1−xTixO3 (104)/(110) reflections broadened suggesting limited grain growth with Ti substitution. The surface roughness (rms) decreased in the case of Ti substituted BFO. Up to 5% Ti in the lattice reduces the leakage current substantially. For BiFe1−xTixO3, the leakage current qualitatively followed the same trend and the behavior resembles to space charge limited current conduction. The magnetic properties were completely lost by Ti substitution and slightly recovered upon cosubstitution with magnetically active Co. The disappearance of ferromagnetic hysteresis of BFO with Ti substitution and its reappearance with Co is suggestive of the origin of magnetic properties consequential from the BFO lattice itself and hence support it as an intrinsic property of BFO. Capacitance-voltage characteristics of BFO,...