Aluminum oxide for an effective gate in Si/SiGe two-dimensional electron gas systems
Aluminum oxide for an effective gate in Si/SiGe two-dimensional electron gas systems
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DOI：
10.1088/0268-1242/26/5/055004
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发表时间：
2011-05
影响因子：
1.9
通讯作者：
Y. Shin;R. Brunner;A. Shibatomi;T. Obata;T. Otsuka;J. Yoneda;Y. Shiraki;K. Sawano;Y. Tokura-Y.-Toku
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文献类型：
--
作者：
Y. Shin;R. Brunner;A. Shibatomi;T. Obata;T. Otsuka;J. Yoneda;Y. Shiraki;K. Sawano;Y. Tokura-Y.-Toku
我们研究了具有不同栅极材料的 Si/SiGe 二维电子气系统的选通特性，并通过 Al2O3 薄膜选通来制造横向 Si/SiGe 量子点。与传统的表面肖特基栅极相比，通过薄 Al2O3 层进行栅极可以有效抑制漏电流。所制造的量子点表现出周期性电流振荡或库仑振荡，栅极泄漏可忽略不计，表明所采用的门控可能有利于利用量子点实现基于 Si/SiGe 的自旋量子位器件。
We investigate the gating properties of Si/SiGe two-dimensional electron gas systems with various gate materials and fabricate a lateral Si/SiGe quantum dot by gating through an Al2O3 film. In comparison to the conventional surface Schottky gates, gating through a thin Al2O3 layer provides a strong suppression of leakage current. The fabricated quantum dot shows a periodic current oscillation or Coulomb oscillation with negligible gate leakage, indicating that the gating employed may be good for implementing Si/SiGe-based spin qubit devices with quantum dots.