Electrical properties of transparent and conducting Ga doped ZnO
Electrical properties of transparent and conducting Ga doped ZnO
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DOI：
10.1063/1.2218466
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发表时间：
2006-08
影响因子：
3.2
通讯作者：
V. Bhosle;A. Tiwari;J. Narayan
中科院分区：
文献类型：
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作者：
V. Bhosle;A. Tiwari;J. Narayan
在本文中，我们报告的金属-半导体转变行为观察到透明和导电ZnO：Ga薄膜的脉冲激光沉积。在14 ~ 300 K温度范围内对不同Ga浓度的ZnO薄膜进行了电阻率测量。的电性能与薄膜结构，并进行了详细的结构表征，使用X-射线衍射，透射电子显微镜，和X-射线光电子能谱。这些薄膜的室温电阻率被发现与Ga浓度降低到5%的Ga，然后增加。在5%Ga时电阻率最低（1.4×10−4Ωcm）。随温度变化的电阻率测量表明，金属-半导体的转变，这是合理的本地化的简并电子。低于转变温度的电导率与T的线性变化表明，简并电子是在一个弱的本地化制度。也发现了T…
In this paper, we report on the metal-semiconductor transition behavior observed in transparent and conducting ZnO:Ga films grown by pulsed-laser deposition. The electrical resistivity measurements were carried out on ZnO films with varying Ga concentration in the temperature range of 14to300K. The electrical properties were correlated with film structure, and detailed structural characterization was performed using x-ray diffraction, transmission electron microscopy, and x-ray photoelectron spectroscopy. The room-temperature resistivity of these films was found to decrease with Ga concentration up to 5% Ga, and then increase. The lowest value of resistivity (1.4×10−4Ωcm) was found at 5% Ga. Temperature dependent resistivity measurements showed a metal-semiconductor transition, which is rationalized by localization of degenerate electrons. A linear variation of conductivity with T below the transition temperature suggests that the degenerate electrons are in a weak-localization regime. It was also found t...