Fabrication of Silicon Nanowires by Metal-Catalyzed Electroless Etching Method and Their Application in Solar Cell

Fabrication of Silicon Nanowires by Metal-Catalyzed Electroless Etching Method and Their Application in Solar Cell
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DOI:
10.1587/transele.2020oms0008
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发表时间:
2021-06
期刊:
IEICE Trans. Electron.
影响因子:
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通讯作者:
N. Tunghathaithip;C. Lertvachirapaiboon;K. Shinbo;K. Kato;S. Tungasmita;A. Baba
N. Tunghathaithip;C. Lertvachirapaiboon;K. Shinbo;K. Kato;S. Tungasmita;A. Baba
中科院分区:
其他
文献类型:
--
作者:
N. Tunghathaithip;C. Lertvachirapaiboon;K. Shinbo;K. Kato;S. Tungasmita;A. Baba

文献摘要

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我们使用金属催化无电蚀刻方法制备硅纳米线(SiNWs),这是一种低成本和简单的技术。将长度为540 nm的SiNW阵列用作SiNW/PEDOT:PSS混合太阳能电池的衬底。此外,金纳米粒子(AuNPs)被用来改善由于局部表面等离子体激元激发的装置的光吸收。结果表明,短路电流密度和功率转换效率分别从22.1 mA/cm ~ 2和6.91%提高到26.0 mA/cm ~ 2和8.56%。通过使用SiNW阵列和与AuNP结合的更高吸收光来建立有机和无机半导体之间的更高界面面积的优点,以改善所开发的太阳能电池的性能。关键词:硅纳米线,MCEE方法,杂化太阳能电池,PEDOT:PSS,AuNPs
We fabricated silicon nanowires (SiNWs) using a metalcatalyzed electroless etching method, which is known to be a low-cost and simple technique. The SiNW arrays with a length of 540 nm were used as a substrate of SiNWs/PEDOT:PSS hybrid solar cell. Furthermore, gold nanoparticles (AuNPs) were used to improve the light absorption of the device due to localized surface plasmon excitation. The results show that the short-circuit current density and the power conversion efficiency increased from 22.1 mA/cm2 to 26.0 mA/cm2 and 6.91% to 8.56%, respectively. The advantage of a higher interface area between the organic and inorganic semiconductors was established by using SiNW arrays and higher absorption light incorporated with AuNPs for improving the performance of the developed solar cell. key words: SiNWs, MCEE method, hybrid solar cell, PEDOT:PSS, AuNPs