Periodic Coulomb oscillations in Si single-electron transistor based on multiple islands
Periodic Coulomb oscillations in Si single-electron transistor based on multiple islands
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DOI：
10.1063/1.2143116
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发表时间：
2005-12
影响因子：
3.2
通讯作者：
K. Ohkura;T. Kitade;A. Nakajima
中科院分区：
文献类型：
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作者：
K. Ohkura;T. Kitade;A. Nakajima
我们制作了高掺杂硅单电子晶体管（SET）与一系列的几何定义的岛屿。在4.2K ~ 100 K温度范围内系统地研究了其导电机理。尽管他们的岛屿大小的变化，一些SET表现出明确的周期性和准周期性库仑振荡。这与只有几何均匀的岛才显示周期性库仑振荡的传统想法相反。我们从理论上证明了在栅电容的微小偏差下会出现周期性的库仑振荡，其周期由栅电容的平均值决定。我们还发现，形成的电荷孤子，通过岛进行传播遍布整个阵列。这也可能有助于库仑振荡的周期性。将多岛SET应用于异或电路中，实现了室温工作。
We fabricated highly doped Si single-electron transistors (SETs) with a series of geometrically defined islands. The conduction mechanism was systematically investigated in the temperature range from 4.2Kto100K. Despite their island size variation, some of the SETs showed clear periodic and quasiperiodic Coulomb oscillations. This is in contrast to the conventional idea that only geometrically uniform islands show periodic Coulomb oscillations. We showed theoretically that periodic Coulomb oscillation appears under the small deviation of gate capacitances with the period determined by the average of the capacitances. We also found that the formed charge soliton that was conducted through the islands was spread over the whole array. This may also contribute to the periodicity of the Coulomb oscillation. The SET with multiple islands was applied to an Exclusive-OR circuit and achieved a room temperature operation.