Properties of p-n heterojunction diode based on Ge2Sb2Te5 and its application for phase change random access memory
Properties of p-n heterojunction diode based on Ge2Sb2Te5 and its application for phase change random access memory
复制标题
DOI：
10.1063/1.3055417
复制
发表时间：
2009-03
影响因子：
3.2
通讯作者：
L. Tang;P. Zhou;H. Wan;Gang Jin;B. Chen;T. Tang;Yinyin Lin
中科院分区：
文献类型：
--
作者：
L. Tang;P. Zhou;H. Wan;Gang Jin;B. Chen;T. Tang;Yinyin Lin
采用p型Ge_2Sb_2 Te_5和低掺杂n型硅片制作了异质结二极管。晶体Ge_2Sb_2 Te_5/n-Si结和非晶Ge_2Sb_2 Te_5/n-Si结的正向电流与反向电流之比分别高达104和103。本文提出了Ge_2Sb_2Te_5/n-Si异质结二极管和Ge_2Sb_2Te_5/n-Si异质结二极管的近似平衡能带图来解释p-Ge_2Sb_2 Te_5/n-Si异质结二极管的特性。提出了一种基于Ge_2Sb_2 Te_5的p-n异质结二极管的特性，用于0 T1 R交叉点结构阵列，以实现可靠的读取操作和降低寄生电流。
Heterojunction diodes are fabricated using p-type Ge2Sb2Te5 and low doped n-type silicon wafer. Rectification is observed with a ratio of forward-to-reverse current as high as 104 and 103 for crystal-Ge2Sb2Te5/n-Si junction and amorphous-Ge2Sb2Te5/n-Si junction, respectively. The approximate equilibrium energy-band diagrams for both crystal-Ge2Sb2Te5/n-Si heterojunction diodes and amorphous-Ge2Sb2Te5/n-Si heterojunction diodes are proposed to explain the properties of the p-Ge2Sb2Te5/n-Si heterojunction diode. Properties of a p-n heterojunction diode based on Ge2Sb2Te5 are proposed to apply in 0T1R cross-point structure array for reliable read operation and for decreasing the sneaking current.