Local electronic properties at organic-metal interfaces: thiophene derivatives on Pt (III)
Local electronic properties at organic-metal interfaces: thiophene derivatives on Pt (III)
复制标题
有机-金属界面的局域电子特性:Pt (III) 上的噻吩衍生物
DOI:
10.1039/c2cp42700a
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发表时间:
2012
期刊:
影响因子:
--
通讯作者:
S. Masuda,
中科院分区:
文献类型:
--
作者:
H. Sato;S. Ushiyama ;M. Sogo;M. Aoki;K-i. Shudo;T. Sugawara;S. Yanagisawa;Y. Morikawa;S. Masuda,
The valence electronic states of thiophene (TP), 2-thiophenethiol (TT), 2,2′-bithiophene (BTP), and 2,2′-bithiophene-5-thiol (BTT) on Pt(111) were measured by ultraviolet photoemission spectroscopy (UPS) and metastable atom electron spectroscopy (MAES) to elucidate how the local electronic properties at the organic–metal interface are altered by the extent of π-conjugation and substituent effects. First-principles calculations using density functional theory (DFT) were used to assign the observed spectra. TP and BTP chemisorb weakly on Pt(111), whereas TT and BTT are strongly bound to Pt(111) through the S atom with the cleavage of the S–H bond, forming a thiolate. In the MAES spectra, weak emission just below the Fermi level (EF) was attributed to a chemisorption-induced gap state (CIGS) produced by orbital mixing between the organic species and Pt(111). The formation of CIGS is responsible for a metallic structure at the organic–metal interface. The relative intensities of CIGSs at EF were in the order of TP (flat-lying configuration) > TT > TP (inclined configuration), indicating that the spatial distribution of CIGSs is drastically altered by the strength of the organic–metal bond and the adsorption geometry. In other words, TP (flat-lying geometry) and TT serve as good mediators of the extension of the metal wave function at EF, which would be closely related to charge transport at organic–metal interfaces.