Deeply and vertically etched butte structure of vertical GaN p-n diode with avalanche capability
Deeply and vertically etched butte structure of vertical GaN p-n diode with avalanche capability
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DOI：
10.7567/1347-4065/ab106c
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发表时间：
2019-06-01
影响因子：
1.5
通讯作者：
Amano, Hiroshi
中科院分区：
文献类型：
--
作者：
Fukushima, Hayata;Usami, Shigeyoshi;Amano, Hiroshi
介绍了一种在GaN自支撑衬底上具有简单边缘终端结构的垂直p-n二极管。这种器件的边缘只需通过深而垂直地蚀刻漂移层来终止。器件模拟表明，刻蚀台面比刻蚀耗尽区更深，器件边缘的电场更加松弛和均匀。制作的器件具有低漏电流和雪崩能力，击穿特性可多次重现。通过发射显微镜观察，我们发现器件侧壁没有漏电流，整个器件内部发生了雪崩击穿。这表明，这种结构完全抑制了器件侧壁的电场拥挤，并获得了均匀的电场分布。(C)2019年日本应用物理学会
A vertical p-n diode with a simple edge termination structure on a GaN free-standing substrate is demonstrated. The edge of this device is terminated simply by etching a drift layer deeply and vertically. A device simulation revealed that the electric field at the device edge was more relaxed and uniformly applied by etching the mesa deeper than the depletion region. The fabricated device showed low leakage current and avalanche capability, and its breakdown characteristics could be reproduced many times. By emission microscopy observation, we found that there was no leakage current at the side wall of the device and that avalanche breakdown occurred throughout the inside of the device. This indicates that the electric field crowding at the side wall of the device was completely suppressed and a uniform electric field distribution was obtained by this structure. (C) 2019 The Japan Society of Applied Physics