PROXIMITY EFFECT IN ELECTRON-BEAM LITHOGRAPHY
PROXIMITY EFFECT IN ELECTRON-BEAM LITHOGRAPHY
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DOI：
10.1116/1.568515
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发表时间：
1975-01-01
期刊：
影响因子：
--
通讯作者：
CHANG, THP
中科院分区：
文献类型：
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作者：
CHANG, THP
<；JATS：P>；提出了一种计算电子束光刻中邻近效应的简单方法。该计算使用互易原理给出了在图案区域中的任何给定点接收的曝光强度的结果。计算结果与实验数据吻合较好。
< jats: p> A simple technique for the computation of the proximity effect in electron-beam lithography is presented. The calculations give results of the exposure intensity received at any given point in a pattern area using a reciprocity principle. Good agreement between the computed results and experimental data was achieved.