EVIDENCE FOR HYDROGEN INCORPORATION DURING POROUS SILICON FORMATION
EVIDENCE FOR HYDROGEN INCORPORATION DURING POROUS SILICON FORMATION
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多孔硅形成过程中氢掺入的证据
DOI：
10.1063/1.114702
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发表时间：
1995
影响因子：
4
通讯作者：
M. Bernard
中科院分区：
文献类型：
--
作者：
P. Allongue;C. D. Villeneuve;L. Pinsard;M. Bernard
通过NRA和原位电容测量，研究了在不同的电化学条件下，包括在形成多孔硅的氟化物溶液中进行阳极氧化，氢在Si中的掺入。结果表明，一个大的近表面浓度的H，而模拟表明，最大的渗透深度是由体积扩散的H和材料去除。扩散系数取决于电化学条件，范围在10−13和10−11 cm 2 s−1之间。讨论了氢渗透与多孔硅层形成的相互作用。
The incorporation of hydrogen into Si, under different electrochemical conditions including anodization in fluoride solutions where porous silicon is formed, is studied by NRA and in situ capacitance measurements. Results suggest a large near surface concentration of H whilst simulation show that the maximum penetration depth is governed by volume diffusion of H and material removal. Diffusion coefficients are found to be dependent on electrochemical conditions and ranged between 10−13 and 10−11 cm2 s−1. The interplay of H permeation with porous silicon layer formation is discussed.
DOI：
10.1007/978-1-4613-3144-5
发表时间：
1980-11
期刊：
--
影响因子：
--
作者：
S. Morrison
通讯作者：
S. Morrison