Nucleation behavior in electroless displacement deposition of metals on silicon from hydrofluoric acid solutions
Nucleation behavior in electroless displacement deposition of metals on silicon from hydrofluoric acid solutions
复制标题
DOI：
10.1016/j.electacta.2007.04.058
复制
发表时间：
2007-11
影响因子：
6.6
通讯作者：
S. Yae;Noriaki Nasu;Kohei Matsumoto;Taizo Hagihara;N. Fukumuro;H. Matsuda
中科院分区：
文献类型：
--
作者：
S. Yae;Noriaki Nasu;Kohei Matsumoto;Taizo Hagihara;N. Fukumuro;H. Matsuda
研究了在含HF的金属盐溶液中，在n-Si上化学置换沉积Pt、Rh、Pd、Cu、Ag和Au等金属微粒的成核行为。金属的粒子密度从106（Pt）到1011（Au）cm−2变化很大，取决于金属的种类。沉积金属可分为两种类型的形核行为。一种由铂族元素组成，包括Pt、Rh和Pd，其显示出比另一组元素低的颗粒密度，并且取决于n-Si晶片的预处理类型，从而取决于Si的表面条件。第二组由铜族元素组成，包括Cu、Ag和Au，其显示出比第一组更高的颗粒密度并且与预处理无关。随着颗粒密度的增加，沉积颗粒的尺寸从几百nm减小到几十nm。此外，Pt和Ag颗粒在n-Si上的置换沉积分别处于渐进和瞬时成核模式。
We investigate the nucleation behavior in the electroless displacement deposition of metal particles (Pt, Rh, Pd, Cu, Ag, and Au) onto n-Si wafers from a metal-salt solution containing HF. The particle density of metals varies widely from 106(Pt) to 1011(Au) cm−2, depending on the kind of metal. Deposited metals can be classified into two types of nucleation behavior. One consists of the platinum group elements, including Pt, Rh, and Pd, which display lower particle densities than elements of the other group and depend on the type of pretreatment of the n-Si wafer, and thus the surface conditions of Si. The second group consists of the copper group elements, including Cu, Ag, and Au, which display higher particle density than the first group and are independent of pretreatment. The size of deposited particles decreases from hundreds nm to tens nm as the particle density increases. Moreover, the displacement deposition of the Pt and Ag particles onto n-Si are in progressive and instantaneous nucleation modes, respectively.