Extent of voltage sensor movement during gating of shaker K+ channels.
Extent of voltage sensor movement during gating of shaker K+ channels.
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DOI：
10.1016/j.neuron.2008.05.006
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发表时间：
2008-07-10
期刊：
影响因子：
16.2
通讯作者：
Selvin PR
中科院分区：
文献类型：
--
作者：
Posson DJ;Selvin PR
Voltage driven activation of Kv channels results from conformational changes of four voltage sensor domains (VSDs) that surround the K+ selective pore domain. How the VSD helices rearrange during gating is an area of active research. Luminescence Resonance Energy Transfer (LRET) is a powerful spectroscopic ruler uniquely suitable for addressing the conformational trajectory of these helices. Using a new geometric analysis of numerous LRET measurements, we were able for the first time to estimate LRET probe positions relative to existing structural models. The experimental movement of helix S4 does not support a large 15–20 Å transmembrane ‘paddle-type’ movement or a near-zero Å vertical ‘transporter-type’ model. Rather, our measurements demonstrate a moderate S4 displacement of 10 ± 5 Å, with a vertical component of 5 ± 2 Å. The S3 segment moves 2 ± 1 Å in the opposite direction and is therefore not moving as an S3–S4 rigid body.
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影响因子：
16.2
作者：
Aggarwal, SK;MacKinnon, R
通讯作者：
MacKinnon, R
DOI：
10.1073/pnas.0711533105
发表时间：
2008-02-05
影响因子：
11.1
作者：
Clayton, Gina M.;Altieri, Steve;Morais-Cabral, Joao H.
通讯作者：
Morais-Cabral, Joao H.
振动弹器K+通道中电压传感器运动的限制。
影响因子：
3.8
作者：
Darman, Rachel B;Ivy, Allison A;Ketty, Vina;Blaustein, Robert O
通讯作者：
Blaustein, Robert O
影响因子：
3.4
作者：
Baumgartner, W;Islas, L;Sigworth, FJ
通讯作者：
Sigworth, FJ
DOI：
10.1073/pnas.082024299
发表时间：
2002-04-30
影响因子：
11.1
作者：
Chakrabarty, T;Xiao, M;Selvin, PR
通讯作者：
Selvin, PR