Preparation and characterization of (110) diamond films used for field-effect transistors
Preparation and characterization of (110) diamond films used for field-effect transistors
复制标题
场效应晶体管用(110)金刚石薄膜的制备及表征
DOI：
10.1117/12.888210
复制
发表时间：
2010-10
期刊：
影响因子：
--
通讯作者：
Jijun Zhang
中科院分区：
文献类型：
--
作者：
Linjun Wang;Xingmao Yan;Fengjuan Zhang;Ke Tang;Xiaoyu Pan;Mei Bi;Qingkai Zeng;Jian Huang;Jijun Zhang
In this work, H-terminated (110) diamond film, a novel active material for high-frequency and high-power field-effect transistors (FETs), was successfully prepared by hot filament chemical vapor deposition (HFCVD) method using acetone as carbon source. X-ray diffraction (XRD) measurements showed that at a lower pressure of 2 KPa and a C/H ratio of 40/200, a higher intensity of (110) diffraction peak with a narrower full width at half maximum (FWHM) was detected which meant highly (110) preferential orientation of diamond films. H-terminated films were achieved by the hydrogen gas pressure of 5KPa and a microwave power of 2.4KW. The H-terminated (110) diamond films obtained were suitable for FETs. Hall Effect measurement indicated that the sheet carrier density of (110)-oriented films was 2.2x1013cm-2, and 2.3 times higher than that of the randomly-oriented films.
