Polarization anisotropy in GaN films for different nonpolar orientations studied by polarized photoreflectance spectroscopy
Polarization anisotropy in GaN films for different nonpolar orientations studied by polarized photoreflectance spectroscopy
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DOI：
10.1063/1.2198086
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发表时间：
2006-04
影响因子：
4
通讯作者：
P. Misra;U. Behn;O. Brandt;H. Grahn;Bilge İmer;S. Nakamura;S. Denbaars;J. Speck
中科院分区：
文献类型：
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作者：
P. Misra;U. Behn;O. Brandt;H. Grahn;Bilge İmer;S. Nakamura;S. Denbaars;J. Speck
我们使用光反射（PR）光谱来研究由于双轴、各向异性面内应变而沿不同非极性方向生长的 GaN 薄膜的电子能带结构修改。无应变的高质量 C 面 GaN 薄膜的激子跃迁能用于精确确定晶体场和自旋轨道分裂能。对于非极性取向的薄膜，在 PR 光谱中观察到的共振特征表现出很强的面内偏振各向异性，并且与 C 面 GaN 薄膜中测量的跃迁能量不同。使用测量的能量以及极化特性和面外应变，从四个具有非极性取向的 GaN 薄膜精确确定变形电势 D5。
We use photoreflectance (PR) spectroscopy to study the electronic band structure modification of GaN films grown along different nonpolar orientations due to biaxial, anisotropic in-plane strain. The exciton transition energies of an unstrained, high-quality C-plane GaN film are used to accurately determine the crystal-field and spin-orbit splitting energies. For films with a nonpolar orientation, the resonant features observed in the PR spectra exhibit a strong in-plane polarization anisotropy and different transition energies from the ones measured in the C-plane GaN film. The deformation potential D5 is accurately determined from four GaN films with a nonpolar orientation using the measured energies together with the polarization properties and out-of-plane strain.