Patterning flexible single-walled carbon nanotube thin films by an ozone gas exposure method
Patterning flexible single-walled carbon nanotube thin films by an ozone gas exposure method
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DOI：
10.1016/j.carbon.2012.08.045
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发表时间：
2013-03
期刊：
影响因子：
10.9
通讯作者：
Yangfen Su;S. Pei;Jinhong Du;Wen‐bin Liu;Chang Liu;Hui‐Ming Cheng
中科院分区：
文献类型：
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作者：
Yangfen Su;S. Pei;Jinhong Du;Wen‐bin Liu;Chang Liu;Hui‐Ming Cheng
图案化是未来单壁碳纳米管薄膜在电子器件中应用的一个必要和重要的过程。与传统的硅基电子材料不同，单壁碳纳米管在暴露于氧化气氛时可以容易地被蚀刻。在这里，我们提出了一种气体暴露的方法来图案化柔性聚合物基板上的单壁碳纳米管薄膜，而不使用真空和高温处理。通过简单地将它们暴露于臭氧中3 min，在聚（对苯二甲酸乙二醇酯）衬底上获得高质量的SWCNT TF（厚度为35- 40 nm）图案。研究发现，臭氧可以化学吸附、功能化和刻蚀单壁碳纳米管，进而破坏单壁碳纳米管薄膜晶体管的导电网络，导致电阻快速增加，实现高效的单壁碳纳米管薄膜晶体管图形。所提出的图案化方法具有高效率、低成本和放大能力的优点，更重要的是，它适合于组装柔性电子器件，为此类物品的低成本和大规模制造指明了前景。
Patterning is an essential and important process for the future use of single-walled carbon nanotube (SWCNT) thin films (TFs) in electronic devices. Different from traditional Si based electronic materials, SWCNTs can be easily etched when exposed to an oxidative atmosphere. Here we propose a gas exposure method to pattern SWCNT TFs on flexible polymeric substrates, without using vacuum and high temperature treatment. By simply exposing them to ozone for 3min, a high quality SWCNT TF (35–40nm in thickness) pattern is obtained on a poly (ethylene terephthalate) substrate. It is found that the ozone can chemisorb on, functionalize and etch SWCNTs and then destroy the electrically conductive network of SWCNT TFs, which causes a fast resistance increase and achieves efficient SWCNT TF patterns. The proposed patterning method has the advantages of high efficiency, low cost and scale-up ability, and more importantly, it is suitable for assembling flexible electronic devices, indicating prospects for the low-cost and large-scale manufacture of such items.