C-Axis-Oriented Ru Thin Films Prepared by Sputtering in Ar and O2 Gas Mixture
C-Axis-Oriented Ru Thin Films Prepared by Sputtering in Ar and O2 Gas Mixture
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Ar-O2气体混合溅射法制备C轴取向Ru薄膜
DOI：
10.1143/jjap.40.6956
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发表时间：
2001
影响因子：
1.5
通讯作者：
K. Sasaki
中科院分区：
文献类型：
--
作者：
Y. Abe;Y. Kaga;M. Kawamura;K. Sasaki
通过在Ar和O2混合气体中溅射Ru靶，在低于RuO2形成所需的O2流量比下，在玻璃衬底上沉积了C轴取向的Ru薄膜。当衬底温度为500℃、氧气流量比为4%时，Ru薄膜的Ru(002)峰摇摆曲线的半高宽最小值为3.5°。观察到c轴取向的Ru薄膜是从晶体生长的初始阶段开始形成的，即使在薄膜厚度为3 nm时也是连续的。提出了单轴取向Ru薄膜的二维晶体生长方法。
C-axis-oriented Ru thin films were deposited on glass substrates by sputtering a Ru target in Ar and O2 gas mixture with O2 flow ratios which were lower than that required for RuO2 formation. A minimum value of 3.5° was obtained for the full-width at half maximum (FWHM) of the rocking curve of a Ru (002) peak for the Ru film deposited at a substrate temperature of 500°C and O2 flow ratio of 4%. The c-axis-oriented Ru films were observed to be formed from the initial stage of crystal growth and became continuous even at a film thickness of 3 nm. Two-dimensional crystal growth of the single-axis-oriented Ru films was suggested.