TRANSITION FROM METALLIC TO TUNNELING REGIMES IN SUPERCONDUCTING MICRO-CONSTRICTIONS - EXCESS CURRENT, CHARGE IMBALANCE, AND SUPER-CURRENT CONVERSION
TRANSITION FROM METALLIC TO TUNNELING REGIMES IN SUPERCONDUCTING MICRO-CONSTRICTIONS - EXCESS CURRENT, CHARGE IMBALANCE, AND SUPER-CURRENT CONVERSION
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DOI：
10.1103/physrevb.25.4515
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发表时间：
1982-01-01
影响因子：
3.7
通讯作者：
KLAPWIJK, TM
中科院分区：
文献类型：
--
作者：
BLONDER, GE;TINKHAM, M;KLAPWIJK, TM
我们提出了一个简单的理论来描述正常-超导微缩接触的I-−-V曲线，它描述了从金属到隧道结的交叉行为。详细的计算是在一个广义的半导体模型中进行的，使用Bogoliubov方程来处理粒子在N−S界面的传输和反射。通过在界面处加入任意强度的势垒，我们计算了从隧道结到金属极限的I-−-V曲线族。由安德烈夫反射产生的过量电流从金属壳的4Δ3 e RN平稳地变化到隧道结的零电流。对于任意势垒强度，重新计算了以前只针对隧道势垒计算的电荷不平衡产生量，并对界面上正常电流到过电流的转换有了详细的了解。我们强调，计算的微分电导为模型的预测提供了一个特别直接的实验检验。
We propose a simple theory for the I− V curves of normal-superconducting microconstriction contacts which describes the crossover from metallic to tunnel junction behavior. The detailed calculations are performed within a generalized semiconductor model, with the use of the Bogoliubov equations to treat the transmission and reflection of particles at the N− S interface. By including a barrier of arbitrary strength at the interface, we have computed a family of I− V curves ranging from the tunnel junction to the metallic limit. Excess current, generated by Andreev reflection, is found to vary smoothly from 4 Δ 3 e R N in the metallic case to zero for the tunnel junction. Charge-imbalance generation, previously calculated only for tunnel barriers, has been recalculated for an arbitrary barrier strength, and detailed insight into the conversion of normal current to supercurrent at the interface is obtained. We emphasize that the calculated differential conductance offers a particularly direct experimental test of the predictions of the model.