Exciton-phonon interaction in InGaN/GaN and GaN/AlGaN multiple quantum wells
Exciton-phonon interaction in InGaN/GaN and GaN/AlGaN multiple quantum wells
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DOI：
10.1063/1.119030
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发表时间：
1997-05
影响因子：
4
通讯作者：
M. Smith;J. Lin;Hongxing Jiang;A. Khan;Q. Chen;A. Salvador;A. Botchkarev;W. Kim;H. Morkoç-
中科院分区：
文献类型：
--
作者：
M. Smith;J. Lin;Hongxing Jiang;A. Khan;Q. Chen;A. Salvador;A. Botchkarev;W. Kim;H. Morkoç-
研究了InxGa1−xN/GaN和GaN/AlxGa1−xN多量子阱（mqw）中的激子-声子耦合，并与InxGa1−xN和GaN薄膜中的激子-声子耦合进行了比较。最多四个声子的声子复制品只能在MQWs的合金区域（InxGa1−xN或AlxGa1−xN）中很好地分解，并且与结构（良好或势垒）无关，而在GaN中的自由激子跃迁和InxGa1−xN涂层中的局部激子跃迁中没有观察到激子跃迁的声子复制品。这表明，MQW的对称性改变了声子色散关系，合金的无序性是iii -氮化物MQW中激子-声子相互作用增强的原因。提取了InxGa1−xN/GaN和GaN/AlxGa1−xN MQW中激子-声子相互作用的耦合常数S，分别为S=0.802和0.556。在理解量子阱中改进的激子-声子耦合的基本物理方面的意义。
The exciton-phonon coupling has been studied in InxGa1−xN/GaN and GaN/AlxGa1−xN multiple quantum wells (MQWs) and compared with that in InxGa1−xN and GaN epilayers. Phonon replicas with up to four phonons can be well resolved only in the alloy regions of the MQWs (InxGa1−xN or AlxGa1−xN) and was independent of the structure (well or barrier), while no phonon replicas of the exciton transitions were observed for the free-exciton transitions in the GaN and the localized exciton transitions in the InxGa1−xN epilayers. It thus suggests that the symmetry properties of MQWs, which modifies the phonon dispersion relation, together with alloy disorder are responsible for the enhanced exciton-phonon interaction in III-nitride MQW. The coupling constant S of the exciton-phonon interaction is extracted for an InxGa1−xN/GaN and GaN/AlxGa1−xN MQW, and is found to be S=0.802 and 0.556, respectively. The implications of the modified exciton-phonon coupling in MQWs in terms of understanding the fundamental physics of thi...