Synthesis, Structure and Electronic Properties of a Stable π‐Type 3‐Electron‐2‐Center‐Bonded Species: A Silicon Analogue of a Bicyclo[1.1.0]butane Radical Anion
Synthesis, Structure and Electronic Properties of a Stable π‐Type 3‐Electron‐2‐Center‐Bonded Species: A Silicon Analogue of a Bicyclo[1.1.0]butane Radical Anion
复制标题
稳定π型3-电子-2-中心键合物质的合成、结构和电子性质:双环[1.1.0]丁烷自由基阴离子的硅类似物
DOI:
10.1002/anie.202117584
复制
发表时间:
2022
期刊:
影响因子:
--
通讯作者:
Iwamoto Takeaki
中科院分区:
文献类型:
--
作者:
Koike Taichi;Osawa Raiki;Ishida Shintaro;Iwamoto Takeaki
σ‐Type 3‐electron‐2‐center (3e‐2c) bonds have been extensively studied as one of the key bonding motifs in radical chemistry and some biological systems. “π‐Type 3e‐2c‐bonded species” that contain a 3e‐2c π‐bond without an underlying σ‐bond framework, however, have been unexplored so far both theoretically and experimentally. Herein, we report the synthesis of the first stable π‐type 3e‐2c‐bonded species, a silicon analogue of a bicyclo[1.1.0]butane radical anion. This compound exhibits an extremely long bridgehead Si−Si bond (3.0638(8) Å) and a strong near‐IR absorption at 922 nm in solution which arises from a HOMO→SOMO [π(Si−Si)→π*(Si−Si)] transition. DFT calculations revealed a π‐type bonding interaction between the two bridgehead silicon atoms with an unpaired electron mainly delocalized across the corresponding π*‐type orbital, which introduces a novel bonding motif for constructing π‐electron systems.