Near-infrared quantum dot light emitting diodes employing electron transport nanocrystals in a layered architecture
Near-infrared quantum dot light emitting diodes employing electron transport nanocrystals in a layered architecture
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在层状结构中采用电子传输纳米晶体的近红外量子点发光二极管
DOI：
10.1088/0957-4484/23/37/375202
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发表时间：
2012-09-21
期刊：
影响因子：
3.5
通讯作者：
Xu, Jian
中科院分区：
文献类型：
--
作者：
Hu, Wenjia;Henderson, Ron;Xu, Jian
本文报道了一种多层结构的PbSe量子点发光二极管（QD-LED），它具有很高的外量子效率。在这些器件中，采用配体置换技术来激活PbSe量子点，并且将ZnO纳米颗粒用于电子传输层。该溶液处理的器件的发射波长在宽光谱范围内是QD尺寸可调的，并且在1412 nm处测量到0.73%的LED效率。在较长波长下的较高效率也从光谱表征推断。
PbSe quantum dot light emitting diodes (QD-LEDs) of a multi-layer architecture are reported in the present work to exhibit high external quantum efficiencies. In these devices, a ligand replacement technique was employed to activate PbSe QDs, and ZnO nanoparticles were used for the electron transport layer. The emission wavelength of this solution processed device is QD size tunable over a broad spectral range, and an LED efficiency of 0.73% was measured at 1412 nm. Higher efficiencies at longer wavelengths are also inferred from spectral characterization.