Photoluminescence of monolayer MoS2 on LaAlO3 and SrTiO3 substrates
Photoluminescence of monolayer MoS2 on LaAlO3 and SrTiO3 substrates
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LaAlO3 和 SrTiO3 基底上单层 MoS2 的光致发光。
DOI：
10.1039/c4nr04602a
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发表时间：
2014-01-01
期刊：
影响因子：
6.7
通讯作者：
Sheng, Liusi
中科院分区：
文献类型：
--
作者：
Li, Yuanyuan;Qi, Zeming;Sheng, Liusi
在原子薄膜/介电 - 基底异质结构中，原子薄膜的元素物理特性受薄膜与底物之间的相互作用的影响。在本文中，在Laalo3和Srtio3底物上利用单层MOS2，以及SIO2和GEL-FILM作为参考底物，类似于先前报道的工作[Nano Res，2014，7，561]，我们系统地研究了底物对光效应的底物效应对光效率的效应单层MOS2。我们观察到单层MOS2的底物依赖性光致发光显着，源自底物到光膜电荷转移。我们发现SIO2底物引入了最多的电荷掺杂，而SRTIO3引入了较少的电荷传输。通过选择所需的底物，我们能够在单层MOS2中诱导不同量的电荷，从而改变了中性激子和带电的激子（TRION）排放。最后，我们提出了一个带形式模型，以阐明电荷转移与底物费米水平和工作函数之间的关系。我们的工作表明，底物电荷转移对单层MOS2光致发光属性产生了强大的影响，该特性应在设备设计和应用过程中考虑。这项工作还提供了一条可能的途径，可以通过基板工程来修改薄膜光致发光属性，以实现未来的设备设计。
In an atomically thin-film/dielectric-substrate heterostructure, the elemental physical properties of the atomically thin-film are influenced by the interaction between the thin-film and the substrate. In this article, utilizing monolayer MoS(2) on LaAlO(3) and SrTiO(3) substrates, as well as SiO2 and Gel-film as reference substrates similar to previously reported work [Nano Res, 2014, 7, 561], we systematically investigate the substrate effect on the photoluminescence of monolayer MoS(2). We observed significantly substrate-dependant photoluminescence of monolayer MoS(2), originating from substrate-to-film charge transfer. We found that SiO2 substrate introduces the most charge doping while SrTiO(3) introduces less charge transfer. Through the selection of desired substrate, we are able to induce different amounts of charge into the monolayer MoS(2), which consequently modifies the neutral exciton and charged exciton (trion) emissions. Finally, we proposed a band-diagram model to elucidate the relation between charge transfer and the substrate Fermi level and work function. Our work demonstrates that the substrate charge transfer exerts a strong influence on the monolayer MoS(2) photoluminescence property, which should be considered during device design and application. The work also provides a possible route to modify the thin-film photoluminescence property via substrate engineering for future device design.