Investigation into the growth mode of GaN thin films on 4H–SiC substrates via plasma-enhanced atomic layer deposition
Investigation into the growth mode of GaN thin films on 4H–SiC substrates via plasma-enhanced atomic layer deposition
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DOI：
10.1016/j.vacuum.2023.112878
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发表时间：
2023-12
期刊：
影响因子：
4
通讯作者：
Jin Yang;Peng Qiu;Ye Li;Mengchao Du;Delin Kong;Hongyu Qiu;Yuyu Hu;Peipei Li;Huiyun Wei-Huiy
中科院分区：
文献类型：
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作者：
Jin Yang;Peng Qiu;Ye Li;Mengchao Du;Delin Kong;Hongyu Qiu;Yuyu Hu;Peipei Li;Huiyun Wei-Huiy
