The Role of Oxygen Transfer in Oxide Heterostructures on Functional Properties
The Role of Oxygen Transfer in Oxide Heterostructures on Functional Properties
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DOI：
10.1002/admi.202101867
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发表时间：
2022
影响因子：
5.4
通讯作者：
Zachary J Corey;H. H. Han-H.;Kyeong Tae Kang;Xuejing Wang;R. Lalk;Binod Paudel;P. Roy;Y. Sharma;Jinkyoung Yoo;Quanxi Jia;Aiping Chen
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作者：
Zachary J Corey;H. H. Han-H.;Kyeong Tae Kang;Xuejing Wang;R. Lalk;Binod Paudel;P. Roy;Y. Sharma;Jinkyoung Yoo;Quanxi Jia;Aiping Chen
据报道，多种机制在氧化物/srtio3（STO）异质结构中起着至关重要的作用。作为模型系统，导电底物表面层的形成(CSSL) on STO substrate is shown at relatively low growth temperature and high oxygen pressure (725 °C, 5 × 10–4 Torr), which contributes to the enhanced conductivity of the LSTO/STO heterostructures. Different from the conventional oxygen vacancy model, this work reveals that the formation of the CSSL occurs when growing an oxide layer (LSTO in this case) on STO, while either annealing nor the growth of an Au layer在完全相同的生长条件下，单独的生长条件在STO中产生CSSL。
A variety of mechanisms are reported to play critical roles in contributing to the high carrier/electron mobility in oxide/SrTiO3 (STO) heterostructures. By using La0.95Sr0.05TiO3 (LSTO) epitaxially grown on different single crystal substrates (such as STO, GdScO3, LaAlO3, (LaAlO3)0.3(Sr2AlTaO6)0.7, and CeO2 buffered STO) as the model systems, the formation of a conducting substrate surface layer (CSSL) on STO substrate is shown at relatively low growth temperature and high oxygen pressure (725 °C, 5 × 10–4 Torr), which contributes to the enhanced conductivity of the LSTO/STO heterostructures. Different from the conventional oxygen vacancy model, this work reveals that the formation of the CSSL occurs when growing an oxide layer (LSTO in this case) on STO, while neither annealing nor the growth of an Au layer alone at the exact same growth condition generates the CSSL in STO. It demonstrates that the oxide layer actively pulls oxygen from STO substrate at given growth conditions, leading to the formation of the CSSL. The observations emphasize the oxygen transfer across film/substrate interface during the synthesis of oxide heterostructures playing a critical role in functional properties.