SOIPIX R&D programme and applications
SOIPIX R&D programme and applications
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SOIPIX R
DOI：
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发表时间：
2015
期刊：
影响因子：
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通讯作者：
L. Soung
中科院分区：
文献类型：
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作者：
E. Gil;L. Soung
SOIPiX是一个研发项目，旨在开发采用绝缘体上硅技术的单片式像素探测器，用于未来的高能物理实验、X射线实验和其他应用。它将辐射传感器和LSI电路集成在一个芯片中，以实现高分辨率和智能探测器。在简要介绍了单片式有源像素传感器的优点之后，讨论了SOI单片式传感器的主要特性：工艺过程、对入射辐射的响应和抗辐射性能。将特别注意对所谓的“后门”效应的描述以及为减轻这种效应而开发的不同技术。最后介绍了该技术的各种应用。
SOIPiX is a R&D project targeting the development of monolithic pixel detectors with Silicon On Insulator technology for future high energy physics experiments, X-ray experiments, and other applications. It integrates both radiation sensors and LSI circuits in one chip to achieve high resolution and intelligent detectors. After a short introduction about the advantages of monolithic active pixel sensors, the main characteristics of SOI monolithic sensors will be discussed: technological process, response to incident radiation and radiation hardness. Special attention will be given to the description of the so-called “back-gate” effect and the different techniques developed to mitigate it. Finally, various applications of this technology will be presented.