An Analytical Model of the Switching Behavior of 4H-SiC p$^{\bm +}$ -n-n$^{\bm +}$ Diodes from Arbitrary Injection Conditions
An Analytical Model of the Switching Behavior of 4H-SiC p$^{\bm +}$ -n-n$^{\bm +}$ Diodes from Arbitrary Injection Conditions
复制标题
任意注入条件下 4H-SiC p$^{m }$ -n-n$^{m }$ 二极管开关行为的分析模型
DOI：
10.1109/tpel.2011.2164097
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发表时间：
2012
影响因子：
6.7
通讯作者：
G. Licciardo
中科院分区：
文献类型：
--
作者：
S. Bellone;F. D. Della Corte;L. Di Benedetto;G. Licciardo
给出了碳化硅二极管开关行为的解析模型。该模型准确地描述了较大范围的正反向电流比下的电流和电压暂态过程，并可求出整个暂态过程中载流子密度、电流分量和基区电场的时空分布。利用该模型，推导出了适用于一般工作条件下二极管电路分析的大信号电路。通过与数值模拟和实验结果的比较，验证了模型的准确性。
An analytical model of the switching behavior of SiC diodes is presented. The model gives an accurate description of the current and voltage transient for a wide range of reverse to forward current ratios and allows one to evaluate the spatial-temporal distributions of carriers density, current components and electric field along the base at a generic instant of the whole transient. Using this model, a large-signal circuit is derived that is useful for circuital analysis of diode under generic operation conditions. The accuracy of the model is verified by comparisons with numerical simulations and experimental results.