Identification of hydrogen platelets in proton‐bombarded GaAs
Identification of hydrogen platelets in proton‐bombarded GaAs
复制标题
质子轰击砷化镓中氢片的识别
DOI：
10.1063/1.337789
复制
发表时间：
1986
期刊：
影响因子：
--
通讯作者：
H. C. Snyman
中科院分区：
文献类型：
--
作者：
J. Neethling;H. C. Snyman
横截面透射电子显微镜技术已被应用于研究GaAs的辐射损伤的性质与300 keV的质子轰击总剂量为1015和5×1015质子cm−2。结果表明，在500 °C及以上的温度下退火后，析出的损伤以氢片晶的形式变得可见（即，氢填充的边缘空位环）在GaAs的{110}解理平面上。
The technique of cross‐sectional transmission electron microscopy has been applied to study the nature of the radiation damage in GaAs bombarded with 300 keV protons to total doses of 1015 and 5×1015 protons cm−2. The results indicate that upon annealing at temperatures of 500 °C and above, the precipitated damage becomes visible in the form of hydrogen platelets (i.e., hydrogen‐filled edge vacancy loops) on the {110} cleavage planes of GaAs.