Recent progress on infrared photodetectors based on InAs and InAsSb nanowires
Recent progress on infrared photodetectors based on InAs and InAsSb nanowires
复制标题
基于InAs和InAsSb纳米线的红外光电探测器的最新进展
DOI：
10.1088/1361-6528/ab8591
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发表时间：
2020
期刊：
影响因子：
3.5
通讯作者：
Chen-hui Yu
中科院分区：
文献类型：
--
作者：
Tengfei Xu;Hailu Wang;Xiaoyao Chen;Man Luo;Lili zhang;Yueming Wang;fansheng Chen;Chongxin Shan;Chen-hui Yu
In recent years, quasi-1D semiconductor nanowires have attracted significant research interest in the field of optoelectronic devices. Indium arsenide (InAs) nanowire, a III–V compound semiconductor structure with a narrow band gap, shows high electron mobility and high absorption from the visible to the mid-wave infrared (MWIR), holding promise for room-temperature high-performance infrared photodetectors. Therefore, the material growth, device preparation and performance characteristics have attracted increasing attention, enabling high-sensitivity InAs nanowire photodetector from the visible to the MWIR at room temperature. This review starts by discussing the growth process of the low-dimensional structure and elementary properties of the material, such as the crystalline phase, mobility, morphology, surface states and metal contacts. Then, three solutions, including the visible-light-assisted infrared photodetection technology, vertical nanowire-array technology and band engineering by the growth of InAsSb nanowires with increasing Sb components, are elaborated to obtain longer cut-off wavelength MWIR photodetectors based on single InAs nanowire and its heterojunction structure. Finally, the potential and challenges of the state-of-the-art optoelectronic technologies for InAs nanowire MWIR photodetectors are summarized and compared, and preliminary suggestions for the technical development route and prospects are presented. This review mainly delineates the research progress of material growth, device fabrication and performance characterization of InAs nanowire MWIR photodetectors, providing a reference for the development of the next-generation high-performance photodetectors over a wide spectrum range.
