Nucleation site location and its influence on the microstructure of solid-phase crystallized SiGe films
Nucleation site location and its influence on the microstructure of solid-phase crystallized SiGe films
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固相晶化SiGe薄膜成核位置及其对微观结构的影响
DOI：
10.1063/1.1389075
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发表时间：
2001
影响因子：
3.2
通讯作者：
C. Ballesteros
中科院分区：
文献类型：
--
作者：
A. Rodríguez;T. Rodríguez;J. Olivares;J. Sangrador;P. Martin;O. Martinez;J. Jiménez;C. Ballesteros
本文利用X射线衍射、拉曼光谱和紫外反射光谱研究了低压化学气相沉积在氧化硅片上沉积的非晶SiGe薄膜的固相晶化动力学。并结合透射电子显微镜对完全晶化的薄膜的微观结构进行了分析。薄膜的Ge分数(X)在0-0.38之间。样品在525-600 °C的温度范围内结晶，所有技术监测的结晶都遵循Avrami模型。不同的晶化行为取决于薄膜中的Ge含量和晶化温度。在考虑了不同工艺的探测深度和由结晶曲线得出的Avrami指数的大小的情况下，从形核位置和晶粒长大的维度方面对结果进行了讨论。
In this work, the solid-phase crystallization kinetics of amorphous SiGe films deposited by low-pressure chemical-vapor deposition on oxidized Si wafers has been studied by x-ray diffraction, Raman spectroscopy, and ultraviolet reflectance. The microstructure of the fully crystallized films has also been analyzed using these techniques in combination with transmission electron microscopy. The Ge fraction of the films (x) was in the 0–0.38 interval. The samples were crystallized at temperatures ranging from 525 to 600 °C. The crystallization monitored by all techniques was found to follow the Avrami model. Different crystallization behaviors are distinguished depending on the Ge content of the films and the crystallization temperature. The results are discussed in terms of the identification of the nucleation site location and the dimensionality of the grain growth, taking into account the probe depth of the different techniques and the values of the Avrami exponent derived from the crystallization curves....