Microstructure and morphology evolution in chemical solution deposited PbSe films on GaAs(100)
Microstructure and morphology evolution in chemical solution deposited PbSe films on GaAs(100)
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GaAs(100)上化学溶液沉积PbSe薄膜的微观结构和形貌演化
DOI：
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发表时间：
2003
期刊：
影响因子：
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通讯作者：
Y. Golan
中科院分区：
文献类型：
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作者：
M. Shandalov;Y. Golan
我们研究了化学沉积在 GaAs(100) 衬底上的 PbSe 薄膜的微观结构和形貌演变。该薄膜由单相纳米晶岩盐 PbSe 组成。发现沉积温度是强烈影响薄膜形貌的重要参数。随着沉积温度的升高，逐渐过渡到强（111）织构，同时微晶尺寸显着增加。透射电子显微镜（TEM）横截面显示出两个不同的区域。在 GaAs/PbSe 界面附近有一层小而圆形的晶体，在其上方观察到由柱状 111 取向微晶组成的第二区域。高分辨率 TEM 和傅立叶分析表明，尽管晶格失配较大（8%）并且存在薄的非晶界面层，但第一层微晶与 GaAs 衬底外延对准。
We have studied the microstructure and morphology evolution in PbSe films chemically deposited on GaAs(100) substrates. The films consisted of a single phase of nanocrystalline rocksalt PbSe. The deposition temperature was found to be an important parameter which strongly influences the film morphology. A gradual transition to strong (111) texture was obtained with increasing deposition temperature, accompanied by a significant increase in crystallite size. Transmission electron microscopy (TEM) cross-sections showed two distinct regions. A layer of small, rounded crystals near the GaAs/PbSe interface above which a second region composed of columnar, 111 oriented crystallites was observed. High resolution TEM and Fourier analysis showed that the first layer of crystallites are in epitaxial registry with the GaAs substrate, in spite of the large (8%) lattice mismatch and the presence of a thin, amorphous interfacial layer.