Impact of Channel Hot-Hole Stressing on Single Oxide Trap Characteristics in the p-MOSFET
Impact of Channel Hot-Hole Stressing on Single Oxide Trap Characteristics in the p-MOSFET
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沟道热空穴应力对 p-MOSFET 中单氧化陷阱特性的影响
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通讯作者：
Gu Chenjie
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作者：
Ju Xin;Ang Diing Shenp;Gu Chenjie
金属氧化物半导体场效应晶体管（MOSFET）的热载流子注入、偏置温度不稳定性（BTI）和时间相关介质击穿（TDDB）等前端可靠性问题已被广泛研究。通常进行加速应力测试，以使可靠性预测能够下降到工作条件。除了预期的新的栅极氧化物陷阱的创建，我们最近的研究表明，TDDB应力可以改变捕获/发射特性的BTI陷阱已经在工作栅极电压。在这项工作中，我们研究的影响，沟道热空穴（CHH）强调的行为上的个别氧化物陷阱在纳米p-MOSFET。在CHH应力后，可以清楚地观察到在工作栅压下陷阱发射时间的变化。由于发射时间的减少，相对不活跃的陷阱（捕获一次且在测量时间范围内不发射）在CHH强制降解后可能变得更加活跃（表现出许多随机捕获和发射事件）。另一方面，在CHH应力之后，由于发射时间的增加，活跃的陷阱可能变得不活跃。在无偏条件下，长时间休息（长达两个月）后，未观察到恢复到预应力行为。然而，一个接近完全的逆转后，获得一个短暂的正偏置的门。当再次施加CHH胁迫时，陷阱也会发生类似的变化。结果表明，不同的可靠性问题之间的相互作用可以存在，并指出需要这样的效果包括在电路的性能预测。
Major front-end reliability problems, namely hot-carrier injection, bias-temperature instability (BTI) and time dependent dielectric breakdown (TDDB) of the metal-oxide-semiconductor field-effect transistor (MOSFET) have been intensively studied for many years. Accelerated stress testing is usually performed to enable reliability projection to be made down to the operating condition. Besides the expected creation of new gate oxide traps, our recent study has shown that TDDB stressing could change the capture/emission characteristics of BTI traps already active at operating gate voltage. In this work, we examine the impact of channel hot-hole (CHH) stressing on the behavior of individual oxide traps in a nanoscale p-MOSFET. A change in the traps’ emission time under operating gate voltage is clearly observed after the CHH stress. Traps which are relatively inactive (capture once and does not emit within the measurement timeframe) may be rendered much more active (exhibit many random capture and emission events) after the CHH stress due to a decrease in emission time. On the other hand, traps which are active may become inactive after the CHH stress due to an increase of emission time. No reversion to the pre-stress behavior is observed after extended rest (up to two months) under unbiased condition. However, a near-complete reversion is obtained upon a brief positive biasing of the gate. The traps could undergo similar changes when the CHH stress is reapplied. The results show that interaction between the different reliability issues can exist and point to the need for such an effect to be included in the performance prediction of circuits.