Low-threshold GaInNAs single-quantum-well lasers with emission wavelength over 1.3 /spl mu/m
Low-threshold GaInNAs single-quantum-well lasers with emission wavelength over 1.3 /spl mu/m
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发射波长超过1.3/spl mu/m的低阈值GaInNA单量子阱激光器
DOI：
10.1049/el:20062982
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发表时间：
2006
影响因子：
1.1
通讯作者：
M. Kondow
中科院分区：
文献类型：
--
作者：
K. Adachi;K. Nakahara;J. Kasai;T. Kitatani;T. Tsuchiya;M. Aoki;M. Kondow
展示了发射波长超过 1.3 μm 的低阈值 GaInNA 单量子阱 (SQW) 激光器。激光器的外延层采用无铝气源分子束外延 (GS-MBE) 生长，以防止与铝相关的任何杂质或污染可能掺入 GaInNAs 有源层中。所制造的激光器被认为在MBE生长的GaInNAs-SQW激光器中表现出最低的阈值电流密度（200 A/cm 2 ）。此外，脊波导激光器在25℃连续波操作下实现了创纪录的低阈值电流（5.2 mA）和长波长（1.31 μm）发射
Low-threshold GaInNAs single-quantum-well (SQW) lasers with emission wavelength over 1.3 mum are demonstrated. Epitaxial layers of the lasers are grown using an aluminium-free gas-source molecular-beam epitaxy (GS-MBE) to prevent any impurity or contamination related to aluminium that might be incorporated into the GaInNAs active layer. The fabricated laser is believed it exhibit the lowest threshold-current density (200 A/cm 2 ) among GaInNAs-SQW lasers grown by MBE. Moreover, record low threshold current (5.2 mA) and long-wavelength (1.31 mum) emission were achieved in a ridge-waveguide laser at 25degC under continuous-wave operation
DOI：
10.1143/jjap.35.1273
发表时间：
1996-02-01
期刊：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS
影响因子：
--
作者：
Kondow, M;Uomi, K;Yazawa, Y
通讯作者：
Yazawa, Y