High Performance Monolithically Integrated GaN Driving VMOSFET on LED
High Performance Monolithically Integrated GaN Driving VMOSFET on LED
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高性能单片集成 GaN 驱动 LED 上的 VMOSFET
DOI：
10.1109/led.2017.2691908
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发表时间：
2017-06-01
影响因子：
4.9
通讯作者：
Lau, Kei May
中科院分区：
文献类型：
--
作者：
Lu, Xing;Liu, Chao;Lau, Kei May
本文报道了GaN基驱动垂直金属氧化物半导体场效应晶体管（VMOSFET）在高输出电流密度和高亮度发光二极管（LED）上的单片集成。通过在LED晶片顶部选择性地再生长简单的p-和n-GaN双层，VMOSFET被实现为具有n/p/n结构，并且通过底部导电n-GaN层与LED固有地连接。在制作过程中，采用四甲基氢化铵湿法腐蚀技术，使VMOSFET的沟道侧壁表面光滑，提高沟道电子迁移率，从而获得了超过1.4kA/cm（2）的高输出电流密度。该集成VMOSFET-LED显示出8.5 mW或9.4 W/cm（2）的高光输出功率，通过VMOSFET的调制注入电流为10 mA，显示了这种集成方案在各种智能照明应用中的巨大潜力。
This letter reports the monolithic integration of GaN-based driving vertical metal-oxide-semiconductor field-effect transistor (VMOSFET) on light-emitting diode (LED) with high output current density and brightness. By selectively regrowing a simple p- and n-GaN bilayer on top of an LED wafer, the VMOSFET was realized with an n/p/n structure and intrinsically connected with the LED through the bottom conductive n-GaN layer. During the fabrication, a tetramethylammonium hydride wet etch technique was employed to smoothen the sidewall channel surface of the VMOSFET and to enhance its channel electron mobility, consequently achieving a high output current density exceeding 1.4 kA/cm(2). The integrated VMOSFET-LED exhibited a high light output power of 8.5 mW or 9.4 W/cm(2) with a modulated injection current of 10 mA through the VMOSFET, showing a great potential of such integration scheme for a variety of smart-lighting applications.